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parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 9.0 i c @ t c = 100c continuous collector current 5.0 i cm pulsed collector current 18 a i lm clamped inductive load current 18 i f @ t c = 100c diode continuous forward current 4.0 i fm diode maximum forward current 16 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 38 p d @ t c = 100c maximum power dissipation 15 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) IRG4BC10KDPBF insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = 2.39v @v ge = 15v, i c = 5.0a short circuit rated ultrafast igbt benefits parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 3.3 r jc junction-to-case - diode ??? ??? 7.0 c/w r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient, typical socket mount ??? ??? 80 wt weight ??? 2 (0.07) ??? g (oz) thermal resistance
t o -22 0 ab www.irf.com 1 ? high short circuit rating optimized for motor control, t sc =10s, @360v v ce (start), t j = 125c, v ge = 15v ? combines low conduction losses with high switching speed ? tighter parameter distribution and higher efficiency than previous generations ? igbt co-packaged with hexfred tm ultrafast, ultrasoft recovery antiparallel diodes ? lead-free ? latest generation 4 igbts offer highest power density motor controls possible ? hexfred tm diodes optimized for performance with igbts. minimized recovery characteristics reduce noise, emi and switching losses

2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 19 29 i c = 5.0a q ge gate - emitter charge (turn-on) ? 2.9 4.3 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) ? 9.8 15 v ge = 15v t d(on) turn-on delay time ? 49 ? t r rise time ? 28 ? t j = 25c t d(off) turn-off delay time ? 97 150 i c = 5.0a, v cc = 480v t f fall time ? 140 210 v ge = 15v, r g = 100 ? e on turn-on switching loss ? 0.25 ? energy losses include "tail" e off turn-off switching loss ? 0.14 ? mj and diode reverse recovery e ts total switching loss ? 0.39 0.48 see fig. 9,10,14 t sc short circuit withstand time 10 ? ? s v cc = 360v, t j = 125c v ge = 15v, r g = 100 ? , v cpk < 500v t d(on) turn-on delay time ? 46 ? t j = 150c, see fig. 10,11,14 t r rise time ? 32 ? i c = 5.0a, v cc = 480v t d(off) turn-off delay time ? 100 ? v ge = 15v, r g = 100 ? t f fall time ? 310 ? energy losses include "tail" e ts total switching loss ? 0.56 ? mj and diode reverse recovery l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 220 ? v ge = 0v c oes output capacitance ? 29 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 7.5 ? ? = 1.0mhz t rr diode reverse recovery time ? 28 42 ns t j = 25c see fig. ?3857 t j = 125c 14 i f = 4.0a i rr diode peak reverse recovery current ? 2.9 5.2 a t j = 25c see fig. ? 3.7 6.7 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ? 40 60 nc t j = 25c see fig. ? 70 105 t j = 125c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery ? 280 ? a/s t j = 25c see fig. during t b ? 235 ? t j = 125c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage? 600 ? ? v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.58 ? v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 2.39 2.62 i c = 5.0a v ge = 15v ? 3.25 ? v i c = 9.0a see fig. 2, 5 ? 2.63 ? i c = 5.0a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.5 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -11 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 1.2 1.8 ? s v ce = 50v, i c = 5.0a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 600v ? ? 1000 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ? 1.5 1.8 v i c = 4.0a see fig. 13 ? 1.4 1.7 i c = 4.0a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)

www.irf.com 3 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 f, frequency (khz) load current (a) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave: fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v , collector-to-emitter voltage (v) i , collector current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 1 10 100 5 10 15 20 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j

4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 5.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 10 c i = a 5 c i = a 2.5 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 2 4 6 8 10 t , case temperature ( c) maximum dc collector current(a) c

www.irf.com 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 10 c i = a 5 c i = a 2.5 c fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature ? 0 20 40 60 80 100 0.30 0.32 0.34 0.36 0.38 0.40 r , gate resistance total switching losses (mj) g v = 480v v = 15v t = 25 c i = 5.0a cc ge j c ? ) 1 10 100 0 100 200 300 400 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 4 8 12 16 20 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 5.0a cc c

6 www.irf.com 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 i , collector current (a) total switching losses (mj) c r = ohm t = 150 c v = 480v v = 15v g j cc ge fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 1 10 100 1 10 100 1000 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area fig. 13 - maximum forward voltage drop vs. instantaneous forward current ? 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 fm forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j

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20 25 30 35 40 45 50 100 1000 f di /dt - (a/s) i = 8.0a i = 4.0a f f v = 200v t = 125c t = 25c r j j 0 2 4 6 8 10 12 14 100 1000 f i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j di /dt - (a/s) f f 0 40 80 120 160 200 100 1000 f di /dt - (a/s) i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j f f 100 1000 100 1000 f di /dt - (a/s) a i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j f f

8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% c i c e on e off ts on off e = (e +e ) v v ge

www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit
figure 18e. macro waveforms for figure 18a's test circuit

10 www.irf.com notes: repetitive rating: v ge =20v; pulse width limited by maximum junction tem- perature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 100 ? (figure 19) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector

example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part number as s e mb l y lot code dat e code ye ar 7 = 1997 line c week 19 logo rectifier int er nat ional note: "p" in assembly line position indicates "lead-free" data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/03

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